Back to Search Start Over

Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory-experimental demonstration and analysis

Authors :
SangBum Kim
Yuan Zhang
McVittie, James P.
Jagannathan, Hemanth
Nishi, Yoshio
Wong, H.-S. Philip
Source :
IEEE Transactions on Electron Devices. Sept, 2008, Vol. 55 Issue 9, p2307, 7 p.
Publication Year :
2008

Abstract

A novel phase-change memory cell is shown by using a low-temperature in situ doped single crystalline germanium nanowire diode as a bottom electrode as well as memory-cell selection device. The heterojunction formed between in situ doped Ge nanowires and Si substrate has provided 100 * isolation for crosspoint-memory operation.

Details

Language :
English
ISSN :
00189383
Volume :
55
Issue :
9
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.185462120