Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory-experimental demonstration and analysis

A novel phase-change memory cell is shown by using a low-temperature in situ doped single crystalline germanium nanowire diode as a bottom electrode as well as memory-cell selection device. The heterojunction formed between in situ doped Ge nanowires and Si substrate has provided 100 * isolation for crosspoint-memory operation.