Growth and characterization of mid-infrared InGaAs/InAlAs strained triple-quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates

Strained triple-quantum-well In0.9Ga0.1As/In0.8Al0.2As light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular-beam epitaxy. The diodes showed room temperature external electroluminescent light emission at 2.4 microns with efficiencies up to 0.000064 . The maximum output power at room temperature is 1.85 microW under pulsed operation at 150 mA. However, their optical performance were restricted by the nonradiative Shockley-Read-Hall recombination.