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Photoexcited states of DX centers in Si doped Al(sub x)Ga(sub 1-x)As
- Source :
- Journal of Applied Physics. Sept 15, 1996, Vol. 80 Issue 6, p3493, 11 p.
- Publication Year :
- 1996
Details
- ISSN :
- 00218979
- Volume :
- 80
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.18949801