Determination of work functions in the [Ta.sub.1-x] [Al.sub.x] [N.sub.y]/Hf [O.sub.2] advanced gate stack using combinatorial methodology

The efficiency of combinatorial methodology applied to [Ta.sub.1-x] [Al.sub.x] [N.sub.y] alloys as metal gates on Hf [O.sub.2] for complementary metal-oxide-semiconductor applications is demonstrated. Results show that the small values of fixed oxide charges in the Si[O.sub.2]/Si interface when annealed at 900 degree centigrade makes [Ta.sub.1-x] [Al.sub.x] [N.sub.y] a potential replacement for polysilicon for p-channel metal-oxide-semiconductor applications.