Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells

Near-lattice-matched GaN/AlInN multiple quantum wells (MQWs) are examined by using the diamond anvil cell high-pressure method. The studies have shown that despite of minimizing piezoelectric component in such a structure, there is still large built-in electric field originated from the spontaneous polarization characteristic for nitrides crystallizing in wurtzite structures.