Interaction of low-energy nitrogen ions with GaAs surfaces

Authors :: Majlinger, Z.
Bozanic, A.
Petravic, M.
Kim, K.-J.
Kim, B.
Yang, Y.-W.
Source :: Journal of Applied Physics. Sept 15, 2008, Vol. 104 Issue 6, 063527-1-063527-5
Publication Year :: 2008
Abstract: The interaction of low-energy nitrogen ions with GaAs (100) surfaces by photoemission spectroscopy (PES) around N 1s and Ga 3d core levels and near-edge x-ray absorption fine structure (NEXAFS) around the N K edge is studied. Nitrogen interstitials and antisites are identified in NEXAFS spectra, while interstitial molecular nitrogen has provided a clear signature in both PES and NEXAFS.