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High-frequency noise performance of 60-nm gate-length FinFETs
- Source :
- IEEE Transactions on Electron Devices. Oct, 2008, Vol. 55 Issue 10, p2718, 10 p.
- Publication Year :
- 2008
-
Abstract
- The radio-frequency noise performance of FinFETs from a 60-nm gate length is investigated. It is observed that the fringing capacitance of the 3-D and multifin structure of the FinFETS is responsible for the degradation of its noise performance.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.189853043