Impact of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric

Silicon nitride films of different refractive indices are used to study the effect of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric. Secondary ion mass spectroscopy study show that in ZnO TFT using high refractive index silicon nitride, gate dielectric is higher that TFTs with low-refractive index silicon nitride, which is indicative of the hydrogenation of ZnO TFTs by high refractive index silicon nitride gate dielectric.