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Accurate extraction of effective channel length and source/drain series resistance in ultrashort-channel MOSFETs by iteration method
- Source :
- IEEE Transactions on Electron Devices. Oct, 2008, Vol. 55 Issue 10, p2779, 6 p.
- Publication Year :
- 2008
-
Abstract
- An improved channel resistance method using iterative procedure for extraction of effective channel length and source/drain series resistance in ultrashort-channel MOSFETs is described. This method takes into account the degradation in mobility in shorter channel devices and by compensating for the mobility in long channels a more accurate effective channel length and source/drain series resistance is obtained.
- Subjects :
- Electric resistance -- Evaluation
Gates (Electronics) -- Analysis
Iterative methods (Mathematics) -- Usage
Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Electric properties
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.189853068