A physically based compact device model for fully depleted and nearly fully depleted SOI MOSFET

A physically based compact submicrometer Fully Depleted Silicon-On-Insulator (FDSOI) and Nearly FDSOI MOSFET all-region model is able to simulate both digital and analog circuits. It incorporates short channel effects and SOI specific mechanisms such as front and back coupling, parasite source/drain resistance effect, Drain Induced Conductivity Enhancement effect, floating body effect, and self-heating. The model uses a single parameter set for different channel lengths and widths. Its computational efficiency is confirmed with the help of experimental data using NMOS FDSOI devices.