The optoelectronic response of a laterally contacted 2-D MESFET

A survey of the optoelectronic response of sidegated 2-D MESFET's utilizing laterally contacting gates to the active region shows broad photoresponse that may be tuned by the applied gate bias. These MESFET's also exhibit a higher responsivity that may be attributed to the top illumination unimpeded by the top gate. The survey reveals photogains as high as 2.4 X 10(super 7) at 0.7 micrometer wavelength and 26 microwatt/sq cm optical power intensity. The contact of the gates with the sides of the photoactive region eliminates the shadowing effect so as to permit direct illumination of the channel.