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Room temperature unpassivated by InAs p-i-n photodetectors grown by molecular beam epitaxy
- Source :
- IEEE Transactions on Electron Devices. Feb, 1997, Vol. 44 Issue 2, p209, 5 p.
- Publication Year :
- 1997
-
Abstract
- An unpassivated InAs p-i-n diode produced using molecular beam epitaxy displays excellent detectivity performance at room temperature. The diode breakdown voltage exceeds 13 V at 77 kelvin (K). The diode zero bias resistance area product is 8.1 ohm-square cm at room temperature and 1.3 M ohm-square cm at 77 K. The detectivity, limited by Johnson noise, is 1.2 X 10 to the 10th power cm-Hz(super 1/2) / W at room temperature when illuminated by a 500 K blackbody source.
Details
- ISSN :
- 00189383
- Volume :
- 44
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.19154223