Room temperature unpassivated by InAs p-i-n photodetectors grown by molecular beam epitaxy

An unpassivated InAs p-i-n diode produced using molecular beam epitaxy displays excellent detectivity performance at room temperature. The diode breakdown voltage exceeds 13 V at 77 kelvin (K). The diode zero bias resistance area product is 8.1 ohm-square cm at room temperature and 1.3 M ohm-square cm at 77 K. The detectivity, limited by Johnson noise, is 1.2 X 10 to the 10th power cm-Hz(super 1/2) / W at room temperature when illuminated by a 500 K blackbody source.