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Room temperature unpassivated by InAs p-i-n photodetectors grown by molecular beam epitaxy

Authors :
Ray-Ming Lin
Shiang-Feng Tang
Si-Chen Lee
Chieh-Hsiung Kuan
Gin-Shiang Chen
Tai-Ping Sun
Jyh-Chiarng Wu
Source :
IEEE Transactions on Electron Devices. Feb, 1997, Vol. 44 Issue 2, p209, 5 p.
Publication Year :
1997

Abstract

An unpassivated InAs p-i-n diode produced using molecular beam epitaxy displays excellent detectivity performance at room temperature. The diode breakdown voltage exceeds 13 V at 77 kelvin (K). The diode zero bias resistance area product is 8.1 ohm-square cm at room temperature and 1.3 M ohm-square cm at 77 K. The detectivity, limited by Johnson noise, is 1.2 X 10 to the 10th power cm-Hz(super 1/2) / W at room temperature when illuminated by a 500 K blackbody source.

Details

ISSN :
00189383
Volume :
44
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.19154223