2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and Hole-Continuity equations

A two-dimensional simulator based on the deterministic self-consistent solution of the Boltzmann, Poisson and Hole-continuity equations effectively models MOSFETs. The direct use of the collision integral is used to study the effect of impact ionization on electron-hole pair formation. It is useful for mainstream device simulation and provides the distribution function from which most device characteristics can be derived. It requires only three equations, unlike the hydrodynamic model and is based on specific scattering mechanism and band-structure.