A Pearson effective potential for Monte Carlo simulation of quantum confinement effects in nMOSFETs

Subjects

Subjects :

Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Electric properties
Monte Carlo method -- Usage
Quantum electronics -- Research
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

55

Issue :

12

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.191790529