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Three-dimensional closed-form model for potential barrier in undoped FinFETs resulting in analytical equations for [V.sub.T] and subthreshold slope
- Source :
- IEEE Transactions on Electron Devices. Dec, 2008, Vol. 55 Issue 12, p3467, 9 p.
- Publication Year :
- 2008
-
Abstract
- An analytical approach is described for calculating the three-dimensional (3-D) electrostatic potential in undoped triple-gate SOI MOS devices. The results have helped in deriving models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.191790808