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An analytic model for nanowire MOSFETs with Ge/Si Core/Shell structure
- Source :
- IEEE Transactions on Electron Devices. Nov, 2008, Vol. 55 Issue 11, p2907, 11 p.
- Publication Year :
- 2008
-
Abstract
- The development, analytical expressions of electrostatic potential and charges for newly designed analytic model for the nanowire MOSFETs (NWFETs) with Ge/Si core/shell structure is described. The device physics of the developed model could be used for developing a compact model for the NWFETs with Ge/Si core/shell heterostructure for circuit design and simulation.
- Subjects :
- Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Design and construction
Metal oxide semiconductor field effect transistors -- Electric properties
Nanotechnology -- Research
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.192328538