Experimental investigations on carrier transport in Si nanowire transistors: ballistic efficiency and apparent mobility

Authors :: Runsheng Wang
Hongwei Liu
Ru Huang
Jing Zhuge
Liangliang Zhang
Dong-Won Kim
Xing Zhang
Donggun, Park
Yangyuan Wang
Source :: IEEE Transactions on Electron Devices. Nov, 2008, Vol. 55 Issue 11, p2960, 8 p.
Publication Year :: 2008
Abstract: The experimental studies on the carrier transport in gate-all-around (GAA) silicon nanowire transistors (SNWTs) are reported. The results obtained demonstrated the potential of the device as an alternative device structure for near-ballistic transport from top-down approach.

Subjects :: Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Electric properties
Metal oxide semiconductor field effect transistors -- Optical properties
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