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A new strained-silicon channel trench-gate power MOSFET: design and analysis

Authors :
Saxena, Raghvendra S.
Kumar, M. Jagadesh
Source :
IEEE Transactions on Electron Devices. Nov, 2008, Vol. 55 Issue 11, p3299, 6 p.
Publication Year :
2008

Abstract

The development of a new trench power MOSFET with strained-Si channel that provides lower on-resistance than the conventional trench MOSFET is presented. The graded strained accumulation region that supports the confinement of carriers near the trench sidewalls has improved the field distribution in the mesa structure to provide a better damage immunity during inductive switching.

Subjects

Subjects :
Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Electric properties
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
55
Issue :
11
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.192336102

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