Effects of microwave fields on recombination processes in 4H and 6H SiC

Authors :: Son, N.T.
Sorman, E.
Chen, W.M.
Bergman, J.P.
Hallin, C.
Kordina, O.
Konstantinov, A.O.
Monemar, B.
Janzen, E.
Hofmann, D.M.
Volm, D.
Meyer, B.K.
Source :: Journal of Applied Physics. Feb 15, 1997, Vol. 81 Issue 4, p1929, 4 p.
Publication Year :: 1997

Subjects :: Electromagnetic fields -- Research
Cyclotron resonance -- Research
Silicon carbide -- Research
Physics

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