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The effects of hydrogen on the enhanced low dose rate sensitivity (ELDRS) of bipolar linear circuits

Authors :
Pease, Ronald L.
Adell, Philippe Claude
Rax, Bernard G.
Chen, Xiao Jie
Barnaby, Hugh J.
Holbert, Keith E.
Hjalmarson, Harold P.
Source :
IEEE Transactions on Nuclear Science. Dec, 2008, Vol. 55 Issue 6, p3169, 5 p.
Publication Year :
2008

Abstract

It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (Radiation Effects in Oxides and Semiconductors). Index Terms--Dose rate, enhanced low-dose rate sensitivity, hydrogen, interface traps, radiation effects, total ionizing dose, voltage comparator.

Details

Language :
English
ISSN :
00189499
Volume :
55
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
edsgcl.193342572