Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si(sub 1-x)Gex source structure

The bandgap engineering method employing a SiGe source structures is proposed as a countermeasure for the floating-body effect in Silicon-On-Insulator (SOI) metal oxide semiconductor field-effect transistors (MOSFET). A narrow-bandgapped SiGe layer is formed in the source region through Ge implantation. Suppressed parasitic bipolar effects are observed on the fabricated N-type SOI-MOSFETS, such as suppression of abnormal subthreshold slope and and improvement of the latch voltage.