Growth kinetics of furnace silicon oxynitridation in nitrous oxide ambients

Subjects

Subjects :

Semiconductor films -- Analysis
Silicon -- Analysis
Semiconductor preparation -- Research
Physics

Details

ISSN :

00218979

Volume :

82

Issue :

1

Database :

Gale General OneFile

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

edsgcl.19699482