Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

Authors :: Pozina, G.
Hemmingsson, C.
Forsberg, U.
Lundskog, A.
Kakanakova-Georgieva, A.
Monemar, B.
Hultman, L.
Janzen, E.
Source :: Journal of Applied Physics. Dec 1, 2008, Vol. 104 Issue 11, 113513-1-113513-5
Publication Year :: 2008
Abstract: AlGaN/AlN/GaN high electron mobility transistor heterostructures grown by metal-organic chemical vapor deposition are studied by temperature dependent time-resolved photoluminescence. The self-consistent calculation of the band potential profile has suggested a recombination mechanism for the AlGaN-related emission involving electrons confined in the triangular AlGaN quantum well and holes weakly localized due to potential fluctuations.

Subjects :: Aluminum alloys -- Electric properties
Aluminum alloys -- Structure
Chemical vapor deposition -- Usage
Gallium compounds -- Electric properties
Gallium compounds -- Structure
Organometallic compounds -- Structure
Organometallic compounds -- Electric properties
Photoluminescence -- Evaluation
Quantum wells -- Structure
Quantum wells -- Electric properties
Physics

Tools