Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures

Low temperature photoluminescence spectroscopy is used for analyzing the effects of the postgrowth thermal annealing on the electronic structure ad carrier dynamics of GaAs/AlGaAs quantum dot and quantum ring structures grown by droplet epitaxy. The modifications of the photoluminescence band depending on the thermal annealing temperature are interpreted by using a simple model based on the Al-Ga interdiffusion.