A new method for high-speed dynamic TSPC memory by low-temperature poly silicon TFT technology

We propose an 8 by 8 dynamic true-single-phase-clock (TSPC) circuit based on low-temperature polycrystalline silicon (LTPS) technology to perform high speed dynamic memory cell. The proposed method allows the memory access rate to reach 25 MHz, in contrast to the traditional LTPS memory, with static circuit design, that operates at a low frequency of only about 6 MHZ. The 8 by 8 dynamic TSPC LTPS memory cell can be applied in high speed circuits. The experimental results show that the proposed 8 by 8 dynamic TSPC LTPS memory cell, operating at 25 MHz, can achieve high speed effectively. We believe it will be the most suitable technology to realize high speed memory for system on a panel (SOP) together with IC chip technology. Index Terms--Clocked storage elements (CSE), low-temperature poly-silicon (LTPS), system on panel (SOP), true-single-phase-clock (TSPC).