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Geometry-scalable parasitic deembedding methodology for on-wafer microwave characterization of MOSFETs
- Source :
- IEEE Transactions on Electron Devices. Feb, 2009, Vol. 56 Issue 2, p299, 7 p.
- Publication Year :
- 2009
-
Abstract
- A geometry-scalable parasitic deembedding technique for on-wafer S-parameter measurements of silicon MOSFETs is presented. The developed method is observed to be accurate, area efficient, and time saving for evaluating the intrinsic characteristics of silicon-based devices.
- Subjects :
- Integrated circuits -- Design and construction
Semiconductor chips -- Design and construction
Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Evaluation
Microwaves -- Measurement
Semiconductor wafers -- Evaluation
Standard IC
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.200144967