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Thermal immune Ni germanide for high performance Ge MOSFETs on Ge-on-Si substrate utilizing [Ni.sub.0.95][Pd.sub.0.05] alloy
- Source :
- IEEE Transactions on Electron Devices. Feb, 2009, Vol. 56 Issue 2, p348, 6 p.
- Publication Year :
- 2009
-
Abstract
- Pd incorporated Ni germanide is used to construct highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The developed [Ni.sub.0.95][Pd.sub.0.05] alloy could find potential use for the high mobility Ge MOSFET applications.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.200145015