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Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers

Authors :
Cho, Ji Ung
Kim, Do Kyun
Tan, Reasmey P.
Isogami, Shinji
Tsunoda, Masakiyo
Takahashi, Migaku
Kim, Young Keun
Source :
IEEE Transactions on Magnetics. June, 2009, Vol. 45 Issue 6, p2364, 3 p.
Publication Year :
2009

Abstract

We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio. Index Terms--Amorphous, hybrid free layer, magnetic tunnel junction, NiFeSiB.

Details

Language :
English
ISSN :
00189464
Volume :
45
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Magnetics
Publication Type :
Academic Journal
Accession number :
edsgcl.201209321