Analytical noise model with the influence of shot noise induced by the gate leakage current for submicrometer gate-length high-electron-mobility transistors

Research using the steady-state Nyquist theorem for multiterminal devices has established a high-frequency analytical noise model capable of catering for shot noise induced by the gate leakage current. The model specifies the minimum noise figure of submicrometer gate-length high-electron-mobility transistors and expresses optimum source impedance in laboratory studies. It can be used in the design of microwave low noise amplifiers.