Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures

A temperature dependent forward-bias current-voltage (I-V) characteristics in the temperature range of 80-410 K was used to study the current-transport mechanisms in (Ni/Au)-[Al.sub.0.22][Ga.sub.0.78]N/AlN/GaN heterostructures. The results revealed that the mechanism of charge transport in the (Ni/Au)-[Al.sub.0.22][Ga.sub.0.78]N/AlN/GaN heterostructure in the temperature range of 80-410 K could be performed by tunneling among those dislocations intersecting the space charge region.