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Rank modulation for flash memories
- Source :
- IEEE Transactions on Information Theory. June, 2009, Vol. 55 Issue 6, p2659, 15 p.
- Publication Year :
- 2009
-
Abstract
- We explore a novel data representation scheme for multilevel flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top" operation, which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only "push-to-the-top" operations, and also construct balanced Gray codes. One important application of the Gray codes is the realization of logic multilevel cells, which is useful in conventional storage solutions. We also investigate rewriting schemes for random data modification. We present both an optimal scheme for the worst case rewrite performance and an approximation scheme for the average-case rewrite performance. Index Terms--Asymmetric channel, flash memory, Gray codes, permutations, rank modulation.
- Subjects :
- Flash memory
Binary-coded notation -- Analysis
Flash memory -- Analysis
Subjects
Details
- Language :
- English
- ISSN :
- 00189448
- Volume :
- 55
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Information Theory
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.201608763