Calculations for the band lineup of strained [In.sub.x][Ga.sub.1-x]N/GaN quantum wells: effects of strain on the band offsets

The band positions for [In.sub.x][Ga.sub.1-x]N/HaN heterointerfaces are calculated, which have directly correlated the positions of the bands with the band gap of InN and strain at the interface. The effects of strain have become very important as the mole fraction of In has increased, changing the band offset ratio.