Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

Authors :: Chiu, C.H.
Kuo, S.Y.
Lo, M.H.
Ke, C.C.
Wang, T.C.
Lee, Y.T.
Kuo, H.C.
Lu, T.C.
Wang, S.C.
Source :: Journal of Applied Physics. March 15, 2009, Vol. 105 Issue 6, 063105-1-063105-6
Publication Year :: 2009
Abstract: A-plane [In.sub.x][Ga.sub.1-x]N/GaN multiple-quantum-wells (MQWs) samples are achieved by using r-plane sapphire substrates and optical quality is examined by using photoluminescence (PL) and time resolved PL measurements (TRPL). The results have shown that the indium content in a-plane InGaN/GaN MQWs has not only affected the optical performance, but is also important for application of nitride semiconductors.

Subjects :: Gallium -- Electric properties
Indium -- Electric properties
Nitrides -- Electric properties
Nitrides -- Optical properties
Photoluminescence -- Evaluation
Quantum wells -- Structure
Quantum wells -- Electric properties
Quantum wells -- Optical properties
Physics

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