Influence of lateral spreading of implanted aluminum ions and implantation-induced defects on forward current-voltage characteristics of 4H-SiC junction barrier Schottky diodes

Authors :: Mochizuki, Kazuhiro
Kameshiro, Norifumi
Onose, Hidekatsu
Yokoyama, Natsuki
Source :: IEEE Transactions on Electron Devices. May, 2009, Vol. 56 Issue 5, p992, 6 p.
Publication Year :: 2009
Abstract: Several experimental and computational studies are conducted to determine the forward current density ([J.sub.F])-forward voltage ([V.sub.F]) characteristics of 4H-silicon junction barrier Schottky (JBS) diodes. These characteristics are shown to be highly affected by the lateral spreading of the implanted aluminum ions and implantation-induced defects.

Subjects :: Aluminum -- Atomic properties
Aluminum -- Electric properties
Voltage -- Measurement
Diodes, Schottky-barrier -- Evaluation
Silicon carbide -- Electric properties
Business
Electronics
Electronics and electrical industries

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