Nanoscale capacitance spectroscopy characterization of AlGaN/GaN heterostructure by current-sensing atomic force microscopy

Authors :: Huizhong Zeng
Haoming Sun
Wenbo Luo
Wen Huang
Zhihong Wang
Yanrong Li
Source :: Journal of Applied Physics. May 1, 2009, Vol. 105 Issue 9, 094319-1-094319-6
Publication Year :: 2009
Abstract: A current-sensing atomic force microscopy is used for measuring the nanoscale capacitance spectroscopy of the two-dimensional electron gas (2DEG) of AlGaN/GaN heterostructures. The current-sensing method has detected the change in Schottky barriers of the probe-sample contact, which has affected the measurement of the threshold voltage of 2DEG.

Subjects :: Aluminum alloys -- Electric properties
Aluminum alloys -- Structure
Aluminum alloys -- Optical properties
Atomic force microscopy -- Usage
Gallium -- Electric properties
Gallium -- Optical properties
Semiconductor-metal boundaries -- Evaluation
Physics

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