Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate in InP

Authors :: Hulko, O.
Thompson, D.A.
Robinson, B.J.
Simmons, J.G.
Source :: Journal of Applied Physics. April 1, 2009, Vol. 105 Issue 7, 073507-1-073507-6
Publication Year :: 2009
Abstract: InGaAsP quantum well (QW) structures are grown on an In[As.sub.0.21][P.sub.0.79] metamorphic substrate layer (MSL) deposited on an InP substrate. The samples with the MSL have displayed more intermixing either due to a higher diffusion or greater P-As exchange probability in the different composition QW and barrier layers when compared to the QW structure grown without the MSL and possibly influenced by the large reduction in phase separation.

Subjects :: Coating processes -- Analysis
Gallium arsenide -- Electric properties
Gallium arsenide -- Optical properties
Indium -- Electric properties
Indium -- Optical properties
Quantum wells -- Structure
Quantum wells -- Composition
Physics

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