Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies

The theoretical observation for negative refraction and subwavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors are presented. The metal-like response of typical semiconductors such as GaAs or GaP which are similar to that found in metallodielectric photonic band gap structures could be exploited for the possible application in the UV and soft x-ray ranges.