Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

The free hole concentration and the low-field transport properties of Al-doped 4H-SiC epilayers with many acceptor concentrations grown on semi-insulating substrates are examined by using Hall-effect measurements. A Caughey-Thomas mobility model with temperature dependent parameters is used for describing the dependence of the hole mobilities on the acceptor concentration.