Implementation of electron-phonon scattering in a CNTFET compact model

A study analytically implements acoustic phonon (AP) and optical phonon (OP) scattering to extend a ballistic conventional carbon nanotube FET (CNTFET) compact model to the case of nonballistic transport. The modifications in the compact model are discussed, its simulation results are validated with nonequilibrium Green function simulation results and the key effects of AP and OP scattering on transistor figures of merit in both analog and digital circuit designs are analyzed.