Noise contribution of the body resistance in partially-depleted SOI MOSFETs

Research was conducted to test whether reduced body resistance in partially-depleted silicon-on-insulator metal oxide semiconductor field-effect transistors can still promote undesirable effects. Large transistors with high transconductance were utilized to study the noise. Measurements were performed in the linear region of operation while the transistor was biased with a source-drain voltage. Results indicated the presence of an additional noise component.