Back to Search Start Over

The optical response of epitaxial lift-off HEMT's to 140 GHz

Authors :
Bhattacharya, Daipayan
Erlig, Hernan
Ali, Mohammed E.
Wang, Shamino
Fetterman, Harold R.
Lai, Richard
Streit, Dwight C.
Source :
IEEE Journal of Quantum Electronics. Sept, 1997, Vol. 33 Issue 9, p1507, 10 p.
Publication Year :
1997

Abstract

Electrooptic sampling and heterodyne techniques were used to measure the optical frequency response of epitaxial lift-off 1.0 micron InP high-electron mobility transistors to 140 GHz. It was found that lift-off devices can be used at millimeter wave frequencies with no degradation response. The epitaxial lift-off process was cited of great potential in the integration of millimeter wave optoelectronic integrated systems.

Subjects

Subjects :
Electrooptics -- Research
Optoelectronics -- Research
High-electron-mobility transistors -- Research
Business
Computers
Electronics
Electronics and electrical industries

Details

ISSN :
00189197
Volume :
33
Issue :
9
Database :
Gale General OneFile
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
edsgcl.20653076

Tools

Authors Abstract Subjects Details