Quantum transport simulation of silicon-nanowire transistors based on direct solution approach of the Wigner transport equation

A self-consistent and 3-dimensional (3-D) quantum simulator is described for Si-nanowire transistors based on the Wigner function model and multidimensional Schrodinger-Poisson algorithm. The studies have shown that the source-drain tunneling is a major phenomenon related to a scaling limit of nanowire devices, and the semiclassical simulation has measurably underestimated a minimum gate length.