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Compact subthreshold current modeling short-channel nanoscale double-gate MOSFET
- Source :
- IEEE Transactions on Electron Devices. July, 2009, Vol. 56 Issue 7, p1533, 5 p.
- Publication Year :
- 2009
-
Abstract
- A physics-based compact subthreshold current model is described for short-channel nanoscale double-gate MOSFETs. The electrostatics is dominated by capacitive coupling between the body electrodes, the potential is obtained as an analytical solution of the 2-D Laplace equation and the current modeling is based on drift-diffusion theory.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.206621505