Pulse-induced low-power resistive switching in Hf[O.sub.2] metal-insulator-metal diodes for nonvolatile memory applications

Authors :: Walczyk, Ch.
Wenger, Ch.
Sohal, R.
Lukosius, M.
Fox, A.
D?browski, J.
Wolansky, D.
Tillack, B.
Mussig, H.-J.
Schroeder, T.
Source :: Journal of Applied Physics. June 1, 2009, Vol. 105 Issue 11, 114103-1-114103-6
Publication Year :: 2009
Abstract: The conduction processes as well as the unipolar resistive switching behavior of Au/Hf[O.sub.2]/TiN metal-insulator-metal structures were explored to understand their use for future nonvolatile memory applications. The current-voltage measurements obtained for Au/Hf[O.sub.2]/TiN structures explain the observed low-power resistive switching process.

Subjects :: Gold -- Electric properties
Hafnium -- Electric properties
Titanium -- Electric properties
Physics

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