Defect formation and annealing behavior of InP implanted by low-energy 15N ions

The annealing properties, structural damage formation and recrystallization of nitrogen-implanted n-type III-V compound semiconductor InP were investigated. Commercially prepared n-type (100) InP samples doped with sulphur were implanted at room temperature using a 100-kV isotope separator. Results showed that implantation dose influenced the depth of an amorphous layer as well as the type of the vacancy defects. Annealing temperature also affected the type of the vacancy defects.