Nonuniform vertical charge transport and relaxation in quantum well infrared detectors

Research was conducted to examine the ac conductance and temperature dependence capacitance of multiquantum well structures at varying bias and frequency changes. These structures feature 4, 8, 16 and 32 wells and are made up of gallium arsenide or aluminum gallium arsenide. Results indicate the existence of two relaxation times at 80-100 K. However, relaxational properties are masked at temperatures above 100K.