A 0.1-micrometer delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

Delta-doped metal oxide semiconductor field effect transistors (MOSFETs) were developed using post-low-energy implanting selective epitaxy technology. In this study, MOSFETs characterized by a gate length of 0.1 micrometer were achieved by suppressing short-channel effects via the optimization of the channel doping level and epi-layer thickness. A significant reduction in junction capacitance at zero bias can be observed.