Back to Search Start Over

A 0.1-micrometer delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

Authors :
Noda, Kenji
Tatsumi, Toru
Uchida, Tetsuya
Nakajima, Ken
Miyamoto, Hidenobu
Hu, Chenming
Source :
IEEE Transactions on Electron Devices. April, 1998, Vol. 45 Issue 4, p809, 6 p.
Publication Year :
1998

Abstract

Delta-doped metal oxide semiconductor field effect transistors (MOSFETs) were developed using post-low-energy implanting selective epitaxy technology. In this study, MOSFETs characterized by a gate length of 0.1 micrometer were achieved by suppressing short-channel effects via the optimization of the channel doping level and epi-layer thickness. A significant reduction in junction capacitance at zero bias can be observed.

Details

ISSN :
00189383
Volume :
45
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.20838290