CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-micron CMOS technology

MLA

Wong, Hon-Sum Philip, et al. “CMOS Active Pixel Image Sensors Fabricated Using a 1.8-V, 0.25-Micron CMOS Technology.” IEEE Transactions on Electron Devices, vol. 45, no. 4, Apr. 1998, p. 889. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.20838301&authtype=sso&custid=ns315887.

APA

Wong, H.-S. P., Chang, R. T., Crabbe, E., & Agnello, P. D. (1998). CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-micron CMOS technology. IEEE Transactions on Electron Devices, 45(4), 889.

Chicago

Wong, Hon-Sum Philip, Richard T. Chang, Emmanuel Crabbe, and Paul D. Agnello. 1998. “CMOS Active Pixel Image Sensors Fabricated Using a 1.8-V, 0.25-Micron CMOS Technology.” IEEE Transactions on Electron Devices 45 (4): 889. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.20838301&authtype=sso&custid=ns315887.