Atomistic analysis of the vacancy mechanism of impurity diffusion in silicon

Research was conducted to investigate the atomistic analysis of the vacancy mechanism of impurity diffusion in silicon. Measurement was performed from the atomistic mechanism through accurately taking into consideration the effects of the microscopic forces between vacancies and dopants. Results indicate that the reduction of the activation energy of dopant diffusivity can be explained by a nonbinding interaction that enlarges the vacancy mobility in the neighborhood of the dopant.