Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films

Stress-induced leakage current in ultrathin metal oxide semiconductor SiO2 films are modeled and simulated to interpret the main features of low-field conductivity of virgin as well as stressed oxides and to accurately represent experimental data obtained from devices fabricated with different technologies. Results showed that the device characteristics are essentially independent of technology and thickness depending on insulator thickness and stress conditions.